A Radio Frequency Single-Electron Transistor Based on an InAs/InP Heterostructure Nanowire
Artikel i vetenskaplig tidskrift, 2008

We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from - 0.5 to at least 1.8 V. The charge sensitivity was measured to 32 mu e(rms) Hz (- 1/2) at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just before carrier depletion. This device had a charge sensitivity of 2.5 mu e(rms) Hz (- 1/2). At low frequencies this device showed a typical 1/f noise behavior, with a level extrapolated to 300 mu e(rms) Hz (- 1/2) at 10 Hz.

Författare

Henrik A. Nilsson

Lunds universitet

Tim Duty

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Simon Abay

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Christopher Wilson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Jakob B. Wagner

University of Queensland

Claes Thelander

Lunds universitet

Per Delsing

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Lars Samuelson

Lunds universitet

Nano Letters

1530-6984 (ISSN) 1530-6992 (eISSN)

Vol. 8 3 872-875

Ämneskategorier

Den kondenserade materiens fysik

DOI

10.1021/nl0731062