In situ Raman studies of single-walled carbon nanotubes grown by local
Journal article, 2008
Using in situ Raman spectroscopy we investigate single wall carbon nanotube growth on Mo electrodes,
using a highly localized resistive heating technique. Small diameter semiconducting single wall nanotubes
grow very rapidly when the catalyst support is heated to a temperature of 800 C. The G/D ratio
shows an interesting time-dependent behaviour. It first decreases, indicating the presence of amorphous
carbon and then significantly increases again after ca. 5 min growth while retaining the position and
shape expected for predominantly semiconducting carbon nanotubes.