In situ Raman studies of single-walled carbon nanotubes grown by local
Artikel i vetenskaplig tidskrift, 2008

Using in situ Raman spectroscopy we investigate single wall carbon nanotube growth on Mo electrodes, using a highly localized resistive heating technique. Small diameter semiconducting single wall nanotubes grow very rapidly when the catalyst support is heated to a temperature of 800 C. The G/D ratio shows an interesting time-dependent behaviour. It first decreases, indicating the presence of amorphous carbon and then significantly increases again after ca. 5 min growth while retaining the position and shape expected for predominantly semiconducting carbon nanotubes.

carbon nanotubes

Författare

Staffan Dittmer

Göteborgs universitet

Chalmers, Teknisk fysik

Niklas Olofsson

Göteborgs universitet

Johan Ek Weis

Andrei Gromov

Eleanor E B Campbell

Göteborgs universitet

Chemical Physics Letters

0009-2614 (ISSN)

Vol. 457 206-

Ämneskategorier

Den kondenserade materiens fysik

DOI

10.1016/j.cplett.2008.04.008