A carbon nanotube gated carbon nanotube transistor with 5 ps gate
Journal article, 2008

Semiconducting carbon nanotubes (CNTs) are attractive as channel material for field-effect transistors due to their high carrier mobility. In this paper we show that a local CNT gate can provide a significant improvement in the subthreshold slope of a CNT transistor compared to back gate switching and provide gate delays as low as 5 ps. The CNT gated CNT transistor devices are fabricated using a two-step chemical vapour deposition technique. The measured transfer characteristics are in very good agreement with theoretical modelling results that provide confirmation of the operating principle of the transistors. Gate delays below 2 ps should be readily achievable by reducing the thickness of the gate dielectric.

carbon nanotubes

Author

Johannes Svensson

University of Gothenburg

Yury Tarakanov

Chalmers, Applied Physics, Condensed Matter Theory

DongSu Lee

Seoul National University

Jari Kinaret

Chalmers, Applied Physics, Condensed Matter Theory

YungWoo Park

Seoul National University

Eleanor E B Campbell

University of Gothenburg

Nanotechnology

0957-4484 (ISSN) 1361-6528 (eISSN)

Vol. 19 32 325201-

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Condensed Matter Physics

DOI

10.1088/0957-4484/19/32/325201

More information

Created

10/7/2017