A 2 GHz oscillator using a monolithically integrated AlN TFBAR
Paper in proceeding, 2008
A 2 GHz oscillator based on a solidly mounted AlN Thin-Film Bulk Acoustic Resonator (TFBAR) is reported. The oscillator is realised as a silicon-on-silicon Multi-Chip Module (MCM) where all passive elements, including the TFBAR, are monolithically integrated on a High-Resistivity Silicon (HRS) carrier. SiGe transistors are flip-chip mounted on the MCM carrier. Measurements of the oscillators reveal a best phase-noise of -125 dBc/Hz at 100 kHz offset. © 2008 IEEE.
Author
Martin Norling
Chalmers, Applied Physics, Physical Electronics
Johannes Enlund
Uppsala University
Ilia Katardjiev
Uppsala University
Spartak Gevorgian
Chalmers, Applied Physics, Physical Electronics
IEEE MTT-S International Microwave Symposium Digest
0149645X (ISSN)
Vol. 1 1 843-846 4632964978-1-4244-1780-3 (ISBN)
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/MWSYM.2008.4632964
ISBN
978-1-4244-1780-3