A 2 GHz oscillator using a monolithically integrated AlN TFBAR
Paper i proceeding, 2008

A 2 GHz oscillator based on a solidly mounted AlN Thin-Film Bulk Acoustic Resonator (TFBAR) is reported. The oscillator is realised as a silicon-on-silicon Multi-Chip Module (MCM) where all passive elements, including the TFBAR, are monolithically integrated on a High-Resistivity Silicon (HRS) carrier. SiGe transistors are flip-chip mounted on the MCM carrier. Measurements of the oscillators reveal a best phase-noise of -125 dBc/Hz at 100 kHz offset. © 2008 IEEE.

Författare

Martin Norling

Chalmers, Teknisk fysik, Fysikalisk elektronik

Johannes Enlund

Uppsala universitet

Ilia Katardjiev

Uppsala universitet

Spartak Gevorgian

Chalmers, Teknisk fysik, Fysikalisk elektronik

IEEE MTT-S International Microwave Symposium Digest

0149645X (ISSN)

Vol. 1 843-846 4632964

Ämneskategorier

Elektroteknik och elektronik

Annan elektroteknik och elektronik

DOI

10.1109/MWSYM.2008.4632964

ISBN

978-1-4244-1780-3