A 2 GHz oscillator using a monolithically integrated AlN TFBAR

Paper i proceeding, 2008

A 2 GHz oscillator based on a solidly mounted AlN Thin-Film Bulk Acoustic Resonator (TFBAR) is reported. The oscillator is realised as a silicon-on-silicon Multi-Chip Module (MCM) where all passive elements, including the TFBAR, are monolithically integrated on a High-Resistivity Silicon (HRS) carrier. SiGe transistors are flip-chip mounted on the MCM carrier. Measurements of the oscillators reveal a best phase-noise of -125 dBc/Hz at 100 kHz offset. © 2008 IEEE.