Oscillators based on monolithically integrated AlN TFBARs
Journal article, 2008

Oscillators based on AlN thin-film bulk acoustic resonators are designed, fabricated and measured. The circuits are realised as silicon-on-silicon multichip modules where SiGe transistors are flip-chip mounted on a novel carrier substrate which includes monolithically integrated resonators and passive components. The paper describes the development and processing of the carrier substrate and resonators, as well as the development of the oscillator circuits.

Author

Martin Norling

Chalmers, Applied Physics, Physical Electronics

Johannes Enlund

Uppsala University

Ilia Katardjiev

Uppsala University

Spartak Gevorgian

Chalmers, Applied Physics, Physical Electronics

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 56 12 3209-3216

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/TMTT.2008.2007091

More information

Latest update

3/28/2018