Oscillators based on monolithically integrated AlN TFBARs
Artikel i vetenskaplig tidskrift, 2008

Oscillators based on AlN thin-film bulk acoustic resonators are designed, fabricated and measured. The circuits are realised as silicon-on-silicon multichip modules where SiGe transistors are flip-chip mounted on a novel carrier substrate which includes monolithically integrated resonators and passive components. The paper describes the development and processing of the carrier substrate and resonators, as well as the development of the oscillator circuits.

Författare

Martin Norling

Chalmers, Teknisk fysik, Fysikalisk elektronik

Johannes Enlund

Uppsala universitet

Ilia Katardjiev

Uppsala universitet

Spartak Gevorgian

Chalmers, Teknisk fysik, Fysikalisk elektronik

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 56 3209-3216

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/TMTT.2008.2007091