Excess low frequency noise in single-wall carbon nanotube
Journal article, 2006
Low frequency noise measurements have been performed on a single-wall carbon nanotube connected by Ti/Au electrodes. It has been found that the 1/f noise decreases when the measurements are undertaken under vacuum and when the nanotube is partially degassed, showing a correlation between the fluctuation inducing the 1/f noise and the presence of gases. We show that the 1/f noise sources are located at the metal/nanotube contacts. When the device is annealed under vacuum at 450K, some Lorentzian shapes are observable and can be related to nanotube defects or to strongly bound molecules. © World Scientific Publishing Company.
field-effect transistors
1/f noise
transport
resistance
contact
Author
S. Soliveres
McMaster University
University of Montpellier
A. Hoffmann
University of Montpellier
F. Pascal
University of Montpellier
C. Delseny
University of Montpellier
Mohammad Kabir
Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics
Omer Nur
University of Gothenburg
A. Salesse
University of Montpellier
Magnus Willander
University of Gothenburg
J. Deen
McMaster University
Fluctuation and Noise Letters
0219-4775 (ISSN)
Vol. 6 1 L45-L55Subject Categories
Mathematics
Other Engineering and Technologies
DOI
10.1142/S0219477506003136