Excess low frequency noise in single-wall carbon nanotube
Artikel i vetenskaplig tidskrift, 2006

Low frequency noise measurements have been performed on a single-wall carbon nanotube connected by Ti/Au electrodes. It has been found that the 1/f noise decreases when the measurements are undertaken under vacuum and when the nanotube is partially degassed, showing a correlation between the fluctuation inducing the 1/f noise and the presence of gases. We show that the 1/f noise sources are located at the metal/nanotube contacts. When the device is annealed under vacuum at 450K, some Lorentzian shapes are observable and can be related to nanotube defects or to strongly bound molecules. © World Scientific Publishing Company.

field-effect transistors

1/f noise

transport

resistance

contact

Författare

S. Soliveres

McMaster University

Université de Montpellier

A. Hoffmann

Université de Montpellier

F. Pascal

Université de Montpellier

C. Delseny

Université de Montpellier

Mohammad Kabir

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fasta tillståndets elektronik

Omer Nur

Göteborgs universitet

A. Salesse

Université de Montpellier

Magnus Willander

Göteborgs universitet

J. Deen

McMaster University

Fluctuation and Noise Letters

0219-4775 (ISSN)

Vol. 6 L45-L55

Ämneskategorier

Matematik

Annan teknik

DOI

10.1142/S0219477506003136