Point contact readout for a quantum dot terahertz sensor
Journal article, 2008

We introduce a terahertz radiation sensor in which the photon-induced ionization state of a quantum dot is monitored by a point contact formed in the same semiconductor heterostructure. For comparison we used a readout based on a single electron transistor coupled to the same quantum dot. The experiments prove functionality of the point contact-based device with additional practical advantage of a higher operation temperature up to 1.5 K and ease of nanofabrication




S. Pelling

R. Davis

L. Kulik

Alexander Tzalenchuk

Sergey Kubatkin

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

T. Ueda

S. Komiyama

V. Antonov

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 93 7 073501-

Subject Categories

Condensed Matter Physics

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