Noise performance of the radio-frequency single-electron transistor
Journal article, 2004
Measurements were performed on aluminum and multiwalled carbon nanotube radio-frequency single-electron transistors (RF-SETs) and analyzed the results carefully. A detailed noise model based on scattering matrix and noise wave formalisms was developed. The signal-to-noise ratios obtained from the model agree well with the measured charge sensitivities. It was found that, in the setup, the first stage HEMT amplifier was the most inadequate component contributing nearly all of the charge noise.
limit
range
balanced amplifiers
charge sensitivity
photon detector
device
Author
L Roschier
Aalto University
P Hakonen
Aalto University
Kevin Bladh
Chalmers, Microtechnology and Nanoscience (MC2)
P Delsing
Chalmers
K Lehnert
Yale University
University of Colorado at Boulder
L Spietz
Yale University
RJ Schoelkopf
Yale University
Journal of Applied Physics
0021-8979 (ISSN) 1089-7550 (eISSN)
Vol. 95 3 1274-1286Subject Categories
Other Engineering and Technologies
DOI
10.1063/1.1635972