Noise performance of the radio-frequency single-electron transistor
Artikel i vetenskaplig tidskrift, 2004

Measurements were performed on aluminum and multiwalled carbon nanotube radio-frequency single-electron transistors (RF-SETs) and analyzed the results carefully. A detailed noise model based on scattering matrix and noise wave formalisms was developed. The signal-to-noise ratios obtained from the model agree well with the measured charge sensitivities. It was found that, in the setup, the first stage HEMT amplifier was the most inadequate component contributing nearly all of the charge noise.

limit

range

balanced amplifiers

charge sensitivity

photon detector

device

Författare

L Roschier

Aalto-Yliopisto

P Hakonen

Aalto-Yliopisto

Kevin Bladh

Chalmers, Mikroteknologi och nanovetenskap (MC2)

P Delsing

Chalmers

K Lehnert

Yale University

University of Colorado at Boulder

L Spietz

Yale University

RJ Schoelkopf

Yale University

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 95 3 1274-1286

Ämneskategorier

Annan teknik

DOI

10.1063/1.1635972