HfO2 gate dielectrics on strained-Si and strained-SiGe layers
Journal article, 2003

Author

Mikael Johansson

Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics

Mahdi Yousif

Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics

Per Lundgren

Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics

Stefan Bengtsson

Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics

J. Sundqvist

Anders Harsta

H. H. Radamson

Semiconductor Science And Technology

Vol. 18 9 820-826

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

More information

Created

10/8/2017