DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures
Paper in proceedings, 2009

indium compounds

high electron mobility transistors

cryogenics

III-V semiconductors

aluminium compounds

Author

Giuseppe Moschetti

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE Indium Phosphide & Related Materials, 2009

1092-8669 (ISSN)

323 - 325
978-1-4244-3432-9 (ISBN)

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

ISBN

978-1-4244-3432-9

More information

Created

10/6/2017