DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures
Paper in proceeding, 2009
indium compounds
high electron mobility transistors
cryogenics
III-V semiconductors
aluminium compounds
Author
Giuseppe Moschetti
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE Indium Phosphide & Related Materials, 2009
1092-8669 (ISSN)
323 - 325978-1-4244-3432-9 (ISBN)
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
ISBN
978-1-4244-3432-9