Planar Schottky Microwave Diodes on 4H-SiC
Paper in proceedings, 2005

Planar microwave Schottky diodes on 4H-SiC have been designed, processed and measured. Different Schottky metals were tested to study the influence on the microwave performance. A maximum extrinsic cut-off frequency of 30.8 GHz was achieved for a tungsten/SiC-Schottky diode. The diode geometry dependence on both the cut-off frequency and the breakdown voltage was investigated. The breakdown voltage was found to be linearly dependent on the anode-cathode distance

microwave

SiC

Schottky

Author

Mattias Sudow

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Materials Science Forum

0255-5476 (ISSN)

Vol. 483-485 937-940

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

More information

Created

10/7/2017