Electrical Characterization and Transmission Electron Microscopy Assessment of Isolation of AlGaN/GaN High Electron Mobility Transistors with Oxygen Ion Implantation
Journal article, 2010

A multienergy oxygen ion implantation process was demonstrated to be compatible with the processing of high-power microwave AlGaN/GaN high electron mobility transistors (HEMTs). A high sheet resistivity and thermally stable isolation were demonstrated. The microstructures of implanted and postannealed specimens were investigated by transmission electron microscopy (TEM). The dependences of the sheet resistivity and different postannealing temperatures were correlated with the defect clusters and microstructure of lattice stacking faults. After 300 degrees C annealing, the sheet resistivity was higher than 10(12) Omega/square, which was attributed to the severe defect interaction eliminating the trapping centers and reducing the leakage current. A maximum output power density of 5.3 W/mm at V-gs = -4 V and V-ds = 50 V at 3 GHz was demonstrated on lag-free HEMTs without field plates on sapphire substrate.

hemts

isolation technology

dc

raman characterization

layers

gan

microwave performance

sapphire

Author

J. Y. Shiu

National Chiao Tung University Taiwan

C. Y. Lu

National Chiao Tung University Taiwan

T. Y. Su

National Tsing Hua University

R. T. Huang

National Taiwan Ocean University

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

E. Y. Chang

National Chiao Tung University Taiwan

Japanese Journal of Applied Physics

0021-4922 (ISSN)

Vol. 49 2 Art. no. 021001-

Subject Categories

Physical Sciences

DOI

10.1143/JJAP.49.021001

More information

Created

10/8/2017