Integrated receivers up to 220 GHz utilizing GaAs-mHEMT technology
Paper in proceeding, 2009
The status of integrated receivers for remote sensing and communication applications from 60 GHz to higher frequencies is reviewed. Recent receiver results for silicon and III-V technologies are compared with Schottky diode receivers.
millimeterwave receiver MMIC
Author
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niklas Wadefalk
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
R. Kuzhuharov
Chalmers
Sten Gunnarsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Serguei Cherednichenko
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Iltcho Angelov
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Morteza Abbasi
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Bertil Hansson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Vessen Vassilev
Chalmers, Department of Radio and Space Science, Advanced Receiver Development
J. Svedin
Swedish Defence Research Agency (FOI)
S. Rudner
Swedish Defence Research Agency (FOI)
I. Kallfass
Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF
A. Leuther
Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF
2009 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2009; Singapore; Singapore; 9 January 2009 through 11 January 2009
225-228
978-1-4244-5030-5 (ISBN)
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/RFIT.2009.5383658
ISBN
978-1-4244-5030-5