Optimization of a Broadband Gain Element for a Widely Tunable High-power Semiconductor Disk Laser
Journal article, 2010

The layer structure of the gain element in an optically pumped semiconductor disk laser was parametrically optimized with respect to a target function specifying a desired unsaturated reflectance over a desired wavelength range at a constant pump intensity. Spectral threshold pump intensity measurements confirmed the efficacy of the design, showing a much wider low-threshold regime than a conventional non-broadband gain element, in good agreement with simulations. This evaluation avoids the possible influence of additional factors under high power operation. Nonetheless, having a high and nearly constant broadband unsaturated reflectance at low pump intensity is a key to obtain good high power performance, as evidenced by the obtained continuous tuning from 967 nm to 1010 nm with a maximum output power of 2.6 W.

Birefringent filter (BRF)

continuous tuning

optically pumped semiconductor disk laser (OP-SDL)

high-power laser

vertical-external-cavity surface-emitting laser (VECSEL)

InGaAs

Author

Carl Borgentun

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Jörgen Bengtsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Frank Demaria

University of Ulm

Alexander Hein

University of Ulm

Peter Unger

University of Ulm

IEEE Photonics Technology Letters

1041-1135 (ISSN)

Vol. 22 13 978-980 5451056

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Telecommunications

Atom and Molecular Physics and Optics

DOI

10.1109/LPT.2010.2048309

More information

Latest update

2/28/2018