Field and current-induced magnetization reversal studied through spatially resolved point-contacts
Journal article, 2010

We present results from scanning tunneling microscopy based point-contact measurements of the local resistance in octagon shaped, Co(20 nm)/Cu (5 nm)/Fe(19)Ni(81)(2.5 nm) spin-valve rings. Through this technique one can detect the magnetoresistance with spatial resolution, and link it to magnetic domain wall motion within the ring. Measurements with varying currents indicate current-induced effects leading to offsets in the magnetic fields required for magnetic switching. The offsets can be attributed to current-induced spin-transfer torque effects for the thin Fe(19)Ni(81) layer and to Oersted field effects for the thick Co layer.

Author

Magne Saxegaard

DeZheng Yang

Erik Wahlström

Rimantas Brucas

Chalmers, Applied Physics, Solid State Physics

Maj Hanson

Chalmers, Applied Physics, Solid State Physics

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 107 10 103909-

Subject Categories

Physical Sciences

DOI

10.1063/1.3407539

More information

Created

10/7/2017