On the Large-Signal Modelling of AlGaN/GaN HEMTs; GaAs ; and SiC MESFETs
Conference poster, 2005
General questions concerning selection, modeling and use of different FET made from GaAs, SiC, GaN are discussed.
Large Signal models
FET
Author
Iltcho Angelov
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Invited paper Target Tutorial QS Modeling Orcietto Italy
Vol. 1 1 101-121
Subject Categories
Other Physics Topics