Structural properties of relaxed Ge buffer layers on Si(001): effect of layer thickness and low temperature Si initial buffer
Journal article, 2004
relaxation
2-dimensional electron gases
substrate
strain
x-ray-diffraction
silicon
surfactant
growth
mobility
heterostructures
Author
Tobias Myrberg
University of Gothenburg
AP Jacob
O. Nur
Milan Friesel
M Willander
CJ Patel
Y Campidelli
C Hernandez
O Kermarrec
D Bensahel
Journal of Materials Science: Materials in Electronics
0957-4522 (ISSN) 1573-482X (eISSN)
Vol. 15 7 411-417Subject Categories
Materials Engineering
Other Engineering and Technologies
Electrical Engineering, Electronic Engineering, Information Engineering
Condensed Matter Physics