Band-reconfigurable LDMOS power amplifier
Paper in proceeding, 2010
A band-reconfigurable LDMOS high power amplifier (PA) with state-of-the-art performance is presented. The frequency reconfigurability is implemented by band-switchable matching networks using PIN diodes. The PA provides power-added efficiencies which are higher than 61% and output power levels exceeding 8 W at 0.9 GHz, 1.5 GHz, and 1.9 GHz. The input return loss in all the three bands is better than 12 dB.
Author
Hossein Mashad Nemati
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
Christian Fager
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
2010 European Microwave Conference
978-981
978-1-4244-7232-1 (ISBN)
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
Other Electrical Engineering, Electronic Engineering, Information Engineering
ISBN
978-1-4244-7232-1