Mg-doped Al0.85Ga0.15N layers grown by hot-wall MOCVD with low resistivity at room temperature
Journal article, 2010

We report on the hot-wall MOCVD growth of Mg-doped Alx Ga1–xN layers with an Al content as high as x ∼ 0.85. After subjecting the layers to post-growth in-situ annealing in nitrogen in the growth reactor, a room temperature resistivity of 7 kΩ cm was obtained indicating an enhanced p-type conductivity compared to published data for Alx Ga1–xN layers with a lower Al content of x ∼ 0.70 and a room temperature resistivity of about 10 kΩ cm. It is believed that the enhanced p-type conductivity is a result of reduced compensation by native defects through growth conditions enabled by the distinct hot-wall MOCVD system.

high-Al-content AlGaN

epitaxy

electrical properties

MOCVD

p-type semiconductors

Author

Anelia Kakanakova-Georgieva

Linköping University

Daniel Nilsson

Linköping University

Martin Stattin

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Urban Forsberg

Linköping University

Åsa Haglund

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Erik Janzén

Linköping University

Physica Status Solidi - Rapid Research Letetrs

1862-6254 (ISSN) 1862-6270 (eISSN)

Vol. 4 11 311-313

Subject Categories

Telecommunications

Condensed Matter Physics

DOI

10.1002/pssr.201004290

More information

Latest update

2/28/2018