Proximity effects correction for sub-10nm patterning node
Paper in proceeding, 2010

In this communication, we report on our experimental results from the research focused on the application of the electron beam direct writing in the nanometer range. Special care is taken to analyze the forward scattering spread and its influence on the pattering fidelity for patterns with the dimensions in the sub-10nm region. We model, simulate and discuss several different cases of the strategy used in the pattern writing. The sub-pixel address grid is used and the energy beam distribution is analyzed with 1 angstrom resolution. The pre-compensated energy distribution is analyzed from its slope cross-sectional point of view. Additionally, the field factor correction (FFC) dose compensation, the correctness of the built-in FFC compensation for the sub-10nm regime, and its influence on the writing speed is discussed. We map the pre-compensated energy distribution used for the pattern exposure to the developed resist profile modeled by the spline approximation of the experimentally acquired resist contrast curve. The newly established development process for the hydrogen silsesquioxane (HSQ) resist has been tested and applied in its optimal way. Successful sub-10nm patterning with the dimension controllability better than 5% of the critical dimension (CD) was achieved. The experimental setup use JBX-9300FS (used @ 100keV) as the exposure tool, and the HSQ (XR-1541) as the resist. The energy intensity distribution (EID) function used for the proximity effects compensation is calculated by CHARIOT simulation engine.

PEC

E-Beam

CHARIOT

PATACON PC-Cluster

HSQ

MC-Simulation

JBX-9300FS

Author

Piotr Jedrasik

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

D. Tsunoda

NIPPON CONTROL SYSTEM Corporation

M. Shoji

NIPPON CONTROL SYSTEM Corporation

H. Tsunoe

NIPPON CONTROL SYSTEM Corporation

Proceedings of SPIE - The International Society for Optical Engineering

0277786X (ISSN) 1996756X (eISSN)

Vol. 7638 76383B
978-0-8194-8052-1 (ISBN)

Subject Categories

Physical Sciences

DOI

10.1117/12.848337

ISBN

978-0-8194-8052-1

More information

Created

10/6/2017