Initial rise of transient electroluminescence in doped Alq(3) films
Journal article, 2010

The doping effect on initial rise of transient electroluminescence (EL) in organic light emitting diodes (OLEDs) is investigated. The dopants red light emitter 5,6,11,12-tetraphenylnaphthacene (Rb) and 4-(diacynomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyan (DCM), and yellow light emitter 3-(2'-benzothiazolyl)-7-diethylaminocoumarin (C-6) were used in green light emitter tris-(8-hydroxyquinoline) aluminum (Alq(3)) film with various concentrations from 0.5 to 24wt%. The increase of EL delay time and the slower rise of EL saturation were observed with doping concentrations. The values of EL delay time was found from 0.78 to 1.86 mu s in doped OLED compared to 0.74 mu s in pure Alq(3) device. The EL saturation time was found from 1.2 to 2.8 mu s for different doping concentration. We have also estimated the carrier mobility from the transient EL measurements. The charge-carrier mobility was found as 0.5-1.2 x 10(-5) cm(2) V-1 s(-1) in doped Alq(3) films.

organic semiconductors

doping

electroluminescence

light-emitting diodes

Author

A. Uddin

University of New South Wales (UNSW)

C. B. Lee

Nanyang Technological University

Thorvald Andersson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Physica Status Solidi (A) Applications and Materials Science

1862-6300 (ISSN) 1862-6319 (eISSN)

Vol. 207 10 2334-2338

Subject Categories

Materials Engineering

Other Engineering and Technologies

Condensed Matter Physics

DOI

10.1002/pssa.201026233

More information

Created

10/7/2017