Optimization of SiC MESFET for high power and high frequency applications
Paper in proceedings, 2011

SiC MESFETs were scaled both laterally and vertically to optimize high frequency and high power performance. Two types of epi-stacks of SiC MESFETs were fabricated and measured. The first type has a doping of 3×10^17 cm-3 in the channel and the second type has higher doping (5×10^17 cm-3) in the channel. The higher doping allows the channel to be thinner for the same current density and therefore a reduction of the aspect ratio is possible. This could impede short channel effects. For the material with higher channel doping the maximum transconductance is 58 mS/mm. The maximum current gain frequency, fT, and maximum frequency of oscillation, fmax, is 9.8 GHz and 23.9 GHz, and 12.4 GHz and 28.2 GHz for the MESFET with lower doped channel and higher doping, respectively.

Silicon Carbide (SiC)

MESFET

High Power

DC Measurements

High Frequency

High Doped Channel

Small-Signal Measurements

SiC

Author

Niclas Ejebjörk

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Peder Bergman

Björn Magnusson

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Materials Science Forum

0255-5476 (ISSN)

Vol. 679-680 629-632

Areas of Advance

Information and Communication Technology

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.4028/www.scientific.net/MSF.679-680.629

More information

Created

10/8/2017