Good selectivity between a NiCr mask and GaAs and AlGaAs by chemically assisted ion beam etching with Cl2 gas
Journal article, 1991
The authors report highly selective etching rates between a Ni-Cr mask and GaAs and AlGaAs layers as well as highly anisotropic profiles in these materials at a nanometer scale using the Ni-Cr mask and chemical assisted ion beam etching. The etching rates of Ni-Cr, GaAs, and AlGaAs depend on Cl2 gas flux. ion beam energy, and ion beam current density. Selectivities of the order of 40:1 and 8:1 between GaAs, respectively. Al0.29Ga0.71As and Ni0.7Cr0.3, were obtained at an ion beam energy of 500 eV, beam current density of 0.2 mA/cm2, and a Cl2 flow of 4.2 ml/min
chromium alloys
chlorine
nickel alloys
gallium arsenide
integrated circuit technology
aluminium compounds
III-V semiconductors
masks
sputter etching
VLSI
Author
Zhaohua Xiao
Department of Solid State Electronics
Bengt Nilsson
Department of Physics
Journal of the Electrochemical Society
0013-4651 (ISSN) 1945-7111 (eISSN)
Vol. 138 3086-9Areas of Advance
Nanoscience and Nanotechnology
Materials Science
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1002/chin.199149304