Tuning light absorption by band gap engineering in ZnCdO as a function of MOVPE-synthesis conditions and annealing
Journal article, 2011

Options of flow rate and growth temperature variations were investigated in order to reveal limitations for single phase wurtzite ZnCdO synthesis by atmospheric pressure metal organic vapor phase epitaxy (MOVPE). It is found that in spite of efficient Cd incorporation (up to 60%), the wurtzite phase and the corresponding single step absorption threshold dominate only up to a Cd content <= 17% in the as-grown samples. Post-fabrication anneals reveal two characteristic optical absorption edges at similar to 2.3 and similar to 3.15 eV that were associated with direct band gaps of cubic CdO and thermodynamically stable wurtzite ZnCdO, respectively.

Phase separation

vapor phase epitaxy

Light absorption




vectored-flow epitaxy

Band gap engineering

zn1-xcdxo thin-films

Metal organic




V. Venkatachalapathy

University of Oslo

A. Galeckas

University of Oslo

Raja Sellappan

Chalmers, Applied Physics, Chemical Physics

Dinko Chakarov

Chalmers, Applied Physics, Chemical Physics

A. Y. Kuznetsov

University of Oslo

Journal of Crystal Growth

0022-0248 (ISSN)

Vol. 315 1 301-304

Subject Categories

Physical Sciences



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