Spatial variarion of hole eigen energies in Ge/Si quantum wells
Paper in proceedings, 2011

Ge quantum well (QW) structures were prepared through Si-capping of 3.3 ML of Ge by MBE on p +-(001) Si substrates at a growth temperature of 550°C. The spatial variation of hole eigen energies in the QW were revealed by DLTS. Depending on the position on the wafer surface, the hole emission may be imposed by a lateral quantum confinement effect. Results of a study by HRTEM methods demonstrate pronounced fluctuations of the QW thickness and variations of the strain field in the QW.

Ge/Si

DLTS

MBE

QWs

HRTEM

Author

M. Kaniewska

Instytut Technologii Elektronowej (ITE)

Olof Engström

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

A. Karmous

Universität Stuttgart

O. Kirfel

Universität Stuttgart

E Kasper

Universität Stuttgart

Bahman Raeissi

Chalmers, Microtechnology and Nanoscience (MC2)

Johan Piscator

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

G Zaremba

Instytut Technologii Elektronowej (ITE)

M Kaczmarczyk

Instytut Technologii Elektronowej (ITE)

M Wzorek

Instytut Technologii Elektronowej (ITE)

A Czerwinsky

Instytut Technologii Elektronowej (ITE)

B Surma

Instytutu Technologii Materialow Elektronicznych w Warszawie

A Wnuk

Instytutu Technologii Materialow Elektronicznych w Warszawie

AIP Conference Proceedings

0094-243X (ISSN) 1551-7616 (eISSN)

Vol. 1399 293-294

Areas of Advance

Nanoscience and Nanotechnology

Subject Categories

Other Engineering and Technologies not elsewhere specified

DOI

10.1063/1.3666369

ISBN

978-073541002-2

More information

Latest update

9/6/2018 2