Epitaxial and Layout Optimization of SiC Microwave Power Varactors
Paper in proceeding, 2011
SiC Schottky diode varactors have been designed for use in tunable microwave power circuits. Epitaxial growth results show excellent material uniformity with low access layer sheet resistances. Two types of device layouts have been evaluated. Island type layouts reduce the parasitic series resistance by 50-60% compared to typical finger layouts. The Q-factors of downscaled island devices are approaching the intrinsic material performance, but are limited by an increasing parasitic parallel capacitance.
Author
Christer Andersson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Björn Magnusson
Niklas Henelius
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Asia-Pacific Microwave Conference Proceedings, APMC (APMC 2011 ;Melbourne, VIC; 5 - 8 December 2011)
1642-1645
978-085825974-4 (ISBN)
Areas of Advance
Information and Communication Technology
Driving Forces
Sustainable development
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
Other Electrical Engineering, Electronic Engineering, Information Engineering
ISBN
978-085825974-4