Electro-Thermal Model for Multi-Anode Schottky Diode Multipliers
Journal article, 2012

We present a self-consistent electro-thermal model for multi-anode Schottky diode multiplier circuits. The thermal model is developed for an -anode multiplier via a thermal resistance matrix approach. The nonlinear temperature responses of the material are taken into consideration by using a linear temperature dependent approximation for the thermal resistance. The electrothermal model is capable of predicting the hot spot temperature, providing useful information for circuit reliability study as well as high power circuit design and optimization. Examples of the circuit analysis incorporating the electro-thermal model for a substrateless- and a membrane-based multiplier circuits, operating up to 200 GHz, are demonstrated. Compared to simulations without thermal model, the simulations with electro-thermal model agree better with the measurement results. For the substrateless multiplier, the error between the simulated and measured peak output power is reduced from ~13% to ~4% by including the thermal effect.

Schottky diodes

gallium arsenide (GaAs)

self-heating

frequency multiplier

Electro-thermal model

thermal analysis

high power submillimeter-wave generation

Author

Aik-Yean Tang

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Erich Schlecht

Jet Propulsion Laboratory, California Institute of Technology

Robert Lin

Jet Propulsion Laboratory, California Institute of Technology

Goutam Chattopadhyay

Jet Propulsion Laboratory, California Institute of Technology

Choonsup Lee

Jet Propulsion Laboratory, California Institute of Technology

John Gill

Jet Propulsion Laboratory, California Institute of Technology

Imran Mehdi

Jet Propulsion Laboratory, California Institute of Technology

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

IEEE Transactions on Terahertz Science and Technology

2156-342X (ISSN)

Vol. 2 3 290-298 6186808

Areas of Advance

Information and Communication Technology

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/TTHZ.2012.2189913

More information

Created

10/6/2017