As3d core level studies of (GaMn)As annealed under As capping
Journal article, 2010

The surface of a Ga(0.95)Mn(0.05)As layer subjected to low temperature annealing under As capping has been studied by core level photoemission with focus on As3d spectrum. By detailed comparison with the surface of pure GaAs subjected to the same surface treatment, the As spectral component of the reacted surface layer has been identified. The relative intensity of this component is consistent with the notion of an MnAs monolayer terminating the annealed (GaMn)As surface.

Core level photoemission

As3d spectrum

Post-growth annealing

(GaMn)As

Author

Intikhab Ulfat

Chalmers, Applied Physics, Solid State Physics

Johan Adell

Chalmers, Applied Physics, Solid State Physics

J. Sadowski

Lund University

Polish Academy of Sciences

Lars Ilver

Chalmers, Applied Physics, Solid State Physics

Janusz Kanski

Chalmers, Applied Physics, Solid State Physics

Surface Science

0039-6028 (ISSN)

Vol. 604 2 125-128

Subject Categories

Physical Sciences

Condensed Matter Physics

DOI

10.1016/j.susc.2009.10.029

More information

Latest update

10/30/2018