Organic Thin-Film Transistors with Anodized Gate Dielectric Patterned by Self-Aligned Embossing on Flexible Substrates
Journal article, 2012

An upscalable, self-aligned patterning technique for manufacturing high- performance, flexible organic thin-film transistors is presented. The structures are self-aligned using a single-step, multi-level hot embossing process. In combination with defect-free anodized aluminum oxide as a gate dielectric, transistors on foil with channel lengths down to 5 mu m are realized with high reproducibility. Resulting on-off ratios of 4 x 106 and mobilities as high as 0.5 cm2 V-1 s-1 are achieved, indicating a stable process with potential to large-area production with even much smaller structures.

aluminum

field-effect transistors

displays

transport

self-alignment

insulator

arrays

organic electronics

thin-film transistors

transistors

pentacene

fabrication

anodization

electronics

performance

nanoimprint lithography

Author

Yiheng Qin

Chalmers, Microtechnology and Nanoscience (MC2)

D. H. Turkenburg

Netherlands Organisation for Applied Scientific Research (TNO)

I. Barbu

Netherlands Organisation for Applied Scientific Research (TNO)

W. T. T. Smaal

Netherlands Organisation for Applied Scientific Research (TNO)

K. Myny

Interuniversity Micro-Electronics Center at Leuven

W. Y. Lin

Interuniversity Micro-Electronics Center at Leuven

G. H. Gelinck

Netherlands Organisation for Applied Scientific Research (TNO)

P. Heremans

Interuniversity Micro-Electronics Center at Leuven

Johan Liu

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

E. R. Meinders

Netherlands Organisation for Applied Scientific Research (TNO)

Advanced Functional Materials

1616-301X (ISSN)

Vol. 22 6 1209-1214

Subject Categories

Physical Sciences

DOI

10.1002/adfm.201102266

More information

Latest update

4/10/2018