Modeling of Long Term Memory Effects in RF Power Amplifiers with Dynamic Parameters
Paper in proceeding, 2012
This paper presents a new radio frequency power amplifier behavioral model that is capable of modeling long term memory effects. The proposed model is derived by assuming linear dependence of the parameters of a conventional model to a long term memory parameter, which enables the model to better track the signal-induced changes of the power amplifier electrical behavior. The model is experimentally tested and shows a 2-3 dB improvement compared to common behavioral models.
Author
Ali Soltani Tehrani
Chalmers, Signals and Systems, Communication, Antennas and Optical Networks
GigaHertz Centre
Thomas Eriksson
Chalmers, Signals and Systems, Communication, Antennas and Optical Networks
GigaHertz Centre
Christian Fager
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
IEEE MTT-S International Microwave Symposium Digest
0149645X (ISSN)
Art. no. 6259496- 6259496978-146731087-1 (ISBN)
Areas of Advance
Information and Communication Technology
Subject Categories
Telecommunications
Signal Processing
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/MWSYM.2012.6259496
ISBN
978-146731087-1