Small epitaxial graphene devices for magnetosensing applications
Journal article, 2012

Hall sensors with the width range from 0.5 to 20.0 mu m have been fabricated out of a monolayer graphene epitaxially grown on SiC. The sensors have been studied at room temperature using transport and noise spectrum measurements. The minimum detectable field of a typical 10-mu m graphene sensor is approximate to 2.5 mu T/root Hz, making them comparable with state of the art semiconductor devices of the same size and carrier concentration and superior to devices made of CVD graphene. Relatively high resistance significantly restricts performance of the smallest 500-nm devices. Carrier mobility is strongly size dependent, signifying importance of both intrinsic and extrinsic factors in the optimization of the device performance




V. Panchal


National Physical Laboratory (NPL)

Karin Cedergren

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

R. Yakimova

Linköping University

A.Y. Tzalenchuk

National Physical Laboratory (NPL)

Sergey Kubatkin

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

O. Kazakova

National Physical Laboratory (NPL)

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 111 7 07E509

Subject Categories

Nano Technology



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