Inhomogeneous Microstructure and Electrical Transport Properties at the LaAlO3/SrTiO3 Interface
Journal article, 2012

Medium-energy ion spectroscopy (MEIS), scanning transmission electron microscopy (STEM) and X-ray photoemission spectroscopy (XPS) were used to investigate the composition and microstructure of LaAlO3/SrTiO3 (LAO/STO) interfaces grown by pulsed laser deposition of LAO on TiO2-terminated STO substrates under different oxidizing conditions. MEIS and XPS indicated Sr/La and Al/Ti intermixing within several atomic layers at all studied interfaces. XPS and STEM revealed that La diffuses deeper than Al. Analysis of the MEIS data suggests inhomogeneous lateral distribution of the diffused elements. This is further supported by the observation of a large positive magneto-resistance at low temperatures. We discuss the role of lateral inhomogeneities on the formation of the electron gas at the LAO/STO interface.

growth

room-temperature

heterointerface

oxide heterostructures

Author

Alexei Kalaboukhov

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Tord Claeson

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Pier Paolo Aurino

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Robert Gunnarsson

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Dag Winkler

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Eva Olsson

Chalmers, Applied Physics, Eva Olsson Group

Nikolina Tuzla

Chalmers, Applied Physics, Eva Olsson Group

Johan Börjesson

Chalmers, Applied Physics, Microscopy and Microanalysis

Chalmers, Applied Physics, Eva Olsson Group

Yu Cao

Chalmers, Materials and Manufacturing Technology, Surface and Microstructure Engineering

Lars Nyborg

Chalmers, Materials and Manufacturing Technology, Surface and Microstructure Engineering

Y. A. Boikov

Russian Academy of Sciences

I.T. Serenkov

Russian Academy of Sciences

V.I. Sakharov

Russian Academy of Sciences

M. P. Volkov

Russian Academy of Sciences

Japanese Journal of Applied Physics

0021-4922 (ISSN)

Vol. 51 11(spec.issue) article no. 11PG10 -

Subject Categories

Condensed Matter Physics

DOI

10.1143/JJAP.51.11PG10

More information

Latest update

7/4/2018 1