Energy loss rates of hot Dirac fermions in epitaxial, exfoliated, and CVD graphene
Journal article, 2013

Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation, and chemical vapor deposition (CVD). It is shown that the temperature dependence of the energy loss rates measured with high-field damped Shubnikov-de Haas oscillations and the temperature dependence of the weak localization peak close to zero field correlate well, with the high-field measurements understating the energy loss rates by similar to 40% compared to the low-field results. The energy loss rates for all graphene samples follow a universal scaling of T-e(4) at low temperatures and depend weakly on carrier density proportional to n(-1/2), evidence for enhancement of the energy loss rate due to disorder in CVD samples.




A. M. R. Baker

J. A. Alexander-Webber

T. Altebaeumer

S. D. McMullan

Tjbm Janssen

A.Y. Tzalenchuk

Samuel Lara Avila

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Sergey Kubatkin

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

R. Yakimova

C. T. Lin

L. J. Li

R. J. Nicholas

Physical Review B - Condensed Matter and Materials Physics

24699950 (ISSN) 24699969 (eISSN)

Vol. 87 4 art. no. 045414- 045414

New Electronics Concept: Wafer-Scale Epitaxial Graphene (ConceptGraphene)

European Commission (EC) (EC/FP7/257829), 2010-10-01 -- 2013-09-30.

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