Modeling of Sb-heterostructure backward diode for millimeter- and submillimeter-wave detection
Journal article, 2013

We present modeling of Sb-heterostructure backward tunneling diode (Sb-HBD) for high efficient millimeter- and submillimeter wave detection. The diode heterostructure is modeled and optimized using TCAD software implementing a non-local band-to-band tunneling model combining with the standard drift-diffusion model. The physical device model was found to be in good agreement with reported experimental results. InAsSb/AlSb/AlGaSb structures were proposed and simulated considering the material growth. The potential of the Sb-HBDs for high frequency operation applications is investigated.

semiconductor device modeling

heterostructure backward tunneling diode

millimeter and submillimeter wave

detector

Author

Parisa Yadranjee Aghdam

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Huan Zhao Ternehäll

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Physica Status Solidi (C) Current Topics in Solid State Physics

1862-6351 (ISSN) 1610-1642 (eISSN)

Vol. 10 5 777-781

Stochastic models of gene and species trees

Swedish Research Council (VR), 2011-01-01 -- 2013-12-31.

Areas of Advance

Information and Communication Technology

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Infrastructure

Nanofabrication Laboratory

DOI

10.1002/pssc.201200621

More information

Created

10/7/2017