Modeling of Sb-heterostructure backward diode for millimeter- and submillimeter-wave detection
Artikel i vetenskaplig tidskrift, 2013
We present modeling of Sb-heterostructure backward tunneling diode (Sb-HBD) for high efficient millimeter- and submillimeter wave detection. The diode heterostructure is modeled and optimized using TCAD software implementing a non-local band-to-band tunneling model combining with the standard drift-diffusion model. The physical device model was found to be in good agreement with reported experimental results. InAsSb/AlSb/AlGaSb structures were proposed and simulated considering the material growth. The potential of the Sb-HBDs for high frequency operation applications is investigated.
semiconductor device modeling
heterostructure backward tunneling diode
millimeter and submillimeter wave
detector
Författare
Parisa Yadranjee Aghdam
Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik
Huan Zhao Ternehäll
Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik
Physica Status Solidi (C) Current Topics in Solid State Physics
1862-6351 (ISSN) 1610-1642 (eISSN)
Vol. 10 5 777-781Stokastiska modeller av gen- och artträd
Vetenskapsrådet (VR) (2010-5623), 2011-01-01 -- 2013-12-31.
Styrkeområden
Informations- och kommunikationsteknik
Ämneskategorier
Elektroteknik och elektronik
Infrastruktur
Nanotekniklaboratoriet
DOI
10.1002/pssc.201200621