Shallow-terrace-like interface in dilute-bismuth GaSb/AlGaSb single quantum wells evidenced by photoluminescence
Journal article, 2013

Photoluminescence (PL) measurements are performed on one GaSb/AlGaSb single-quantum-well (SQW) sample and two dilute-bismuth (Bi) GaSb/AlGaSb SQW samples grown at 360 and 380 °C, at low temperatures and under magnetic fields. Bimodal PL features are identified in the dilute-Bi samples, and to be accompanied by abnormal PL blueshift in the sample grown at 360 °C. The bimodal PL features are found to be from similar origins of band-to-band transition by magneto-PL evolution. Analysis indicates that the phenomenon can be well interpreted by the joint effect of interfacial large-lateral-scale islands and Al/Ga interdiffusion due to Bi incorporation. The interdiffusion introduces about 1-monolayer shrinkage to the effective quantum-well thickness, which is similar to the interfacial islands height, and the both together result in an unusual shallow-terrace-like interface between GaSbBi and AlGaSb. A phenomenological model is established, the Bi content of isoelectronic incorporation and the exciton reduced effective mass are estimated for the GaSbBi sample grown at 380 °C, and a value of about 21 meV/% is suggested for the bandgap bowing rate of GaSbBi. An effective routine is suggested for determining the Bi content and the depth of the shallow-terraces at interface in dilute-Bi SQW structures.

dilute bismide

photoluminescence

GaSbBi

quantum well

interface

MBE

Author

X Chen

Chinese Academy of Sciences

Yuxin Song

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Liang Zhu

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Wei Lu

Chinese Academy of Sciences

Shaoling Guo

Chinese Academy of Sciences

Jun Shao

Chinese Academy of Sciences

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 113 15 153505-153507 153505

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Materials Science

Infrastructure

Nanofabrication Laboratory

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

Condensed Matter Physics

DOI

10.1063/1.4801530

More information

Latest update

5/30/2018