Integration of silicon and diamond, aluminum nitride or aluminum oxide for electronic materials
Paper in proceeding, 1999

Material integration for the formation of advanced silicon-on-insulator materials by wafer bonding and etch-back is discussed. Wafer bonding allows the combining of materials that it is not possible to grow on top of each other by any other technique. In our experiments, polycrystalline diamond, aluminum nitride or aluminum oxide films with thickness of 0.1-5 μm were deposited on silicon wafers. Bonding experiments were made with these films to bare silicon wafers with the goal of forming silicon-on-insulator structures with buried films of polycrystalline diamond, aluminum nitride or aluminum oxide. These silicon-on-insulator structures are intended to address self-heating effects in conventional silicon-on-insulator materials with buried layers of silicon dioxide. The surfaces of the deposited diamond films were, by order of magnitude, too rough to allow direct bonding to a silicon wafer. In contrast the deposited aluminum nitride and aluminum oxide films did allow direct bonding to silicon. Bonding of the diamond surface to silicon was instead made through a deposited and polished layer of polycrystalline silicon on top of the diamond. In the case of the aluminum nitride electrostatic bonding was also demonstrated. Further, the compatibility of these insulators to silicon process technology was investigated

surface topography

elemental semiconductors

buried layers

aluminium compounds

wafer bonding

diamond

silicon-on-insulator

Author

Stefan Bengtsson

Department of Microelectronics, Solid State Electronics

Mats Bergh

Department of Microelectronics, Solid State Electronics

Anders Soderbarg

Bengt Edholm

Jörgen Olsson

Per Ericsson

Department of Microelectronics, Solid State Electronics

Stefan Tiensuu

conference proceedings:III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics. Symposium.

133-

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

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Created

10/6/2017