Characterisation of interface electron state distributions at directly bonded silicon/silicon interfaces
Paper in proceeding, 1990

Measurement methods for characterizing the electrical properties of directly bonded Si/Si n/n-type or p/p-type interfaces are presented. The density of interface states in the bandgap of the semiconductor and the density of interface charges at the bonded interface are determined from measurements of current and capacitance vs. applied voltage

elemental semiconductors

interface electron states

semiconductor junctions

bonds (chemical)



Stefan Bengtsson

Department of Solid State Electronics

Olof Engström

Department of Solid State Electronics

ESSDERC 90. 20th European Solid State Device Research Conference


Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

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