Electrical characterization of bonding interfaces
Paper in proceedings, 1992

An overview is given on measurement techniques and results obtained for the characterization of bonded Si-Si, Si-SiO2 and SiO2-SiO2 interfaces. The electrical properties of Si-Si interfaces are found to be very similar to those of grain boundaries, which suggests a model where the current across the interface is limited by a potential barrier determined by charge carriers captures into electron states at the bonded interface. From current-voltage and capacitance-voltage measurements, the interface charge and its energy distribution can be determined. For bonded Si-SiO2 interfaces, energy states distributions are obtained by capacitance voltage technique with midgap densities in the region at or above 5 1010 eV-1 cm-2. Interfaces between two bonded SiO2 layers exhibit an increased concentration of electron traps

metal-insulator-semiconductor structures

electron traps

elemental semiconductors

wafer bonding

semiconductor junctions

electronic density of states

semiconductor-insulator boundaries

silicon compounds

interface electron states




Olof Engström

Department of Solid State Electronics

Stefan Bengtsson

Department of Solid State Electronics

Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications


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Other Electrical Engineering, Electronic Engineering, Information Engineering

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