Effects of different prebonding cleaning procedures on the buried oxides of bond-and-etchback silicon-on-insulator materials
Paper in proceeding, 1995

Chemical element distributions and electrical properties of metal-oxide-semiconductor devices made of bond-and-etchback silicon-on-insulator materials were investigated. The buried oxide functioned as the gate dielectric for the metal-oxide-semiconductor devices. Three groups of devices with different bonded interface locations and prebonding cleaning procedures were made. Secondary ion mass spectroscopy revealed that bonded oxides cleaned using an RCA clean before contacting had a higher concentration of hydrogen at the bonded interface compared to devices rinsed in deionized water only. The RCA cleaned devices were also more sensitive to bias-temperature stress and charge injection by internal photoemission. Finally, partial etchback of the bonded oxides of RCA cleaned devices made the top oxide crack at several locations

wafer bonding

buried layers

thermal stresses

secondary ion mass spectroscopy

surface cleaning


internal stresses

dielectric thin films



interface structure


MOS capacitors


Per Ericsson

Department of Solid State Electronics

Stefan Bengtsson

Department of Solid State Electronics

Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications


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Other Electrical Engineering, Electronic Engineering, Information Engineering

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