ZrO2 gate dielectrics prepared by e-beam deposition of Zr and YSZ films and post annealing processes
Paper in proceedings, 2002

In this paper we present the electrical performance of MOS capacitors with ZrO2 gate dielectric prepared by e-beam evaporation of zirconium and yttrium stabilized zirconia (YSZ) and subsequent thermal treatment. To this stage we have reached an equivalent oxide thickness (EOT) of 1.9 nm. The effect of post-oxidation annealing on Zr incorporation into the Si substrate is investigated. SIMS analysis showed no signs of Zr diffusion in the substrate at temperatures as high as 900°C and that significant diffusion occurs only at 1100°C

dielectric thin films

CMOS integrated circuits

permittivity

diffusion

integrated circuit testing

MOS capacitors

oxidation

annealing

secondary ion mass spectra

zirconium compounds

electron beam deposition

Author

Mikael Johansson

Department of Microelectronics

M. Y. A. Yousif

Department of Microelectronics

Alok Sareen

Department of Microelectronics

Per Lundgren

Department of Microelectronics

Stefan Bengtsson

Department of Microelectronics

Ulf Södervall

Department of Microelectronics and Nanoscience

ESSDERC 2002. Proceedings of the 32nd European Solid-State Device Research Conference

419-

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

More information

Created

10/7/2017