Three- and Four-Point Hamer-type MOSFET Parameter Extraction Methods Revisited
Paper in proceedings, 2013

In this paper the three-point Hamer type and four-point Karlsson & Jeppson type MOSFET parameter extraction methods are revisited concerning robustness and selection of data points. The method for fitting models described by rational functions to measured data proposed by Hamming is also discussed and it is shown how this method calculates its weighted data points. An alternative method where MOSFET resistance values are used instead of current values for the extraction procedure is also investigated in an attempt to increase extraction method robustness. Finally, it is shown how the three point extraction method can be applied not only to the triode region but also to the MOSFET saturation region for separating parameters for the body effect and the velocity saturation


Kjell Jeppson

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

IEEE International Conference on Microelectronic Test Structures (ICMTS 2013)

1071-9032 (ISSN)

Osaka, Japan 141-145

Areas of Advance

Information and Communication Technology

Subject Categories

Nano Technology





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