A learning tool MOSFET model A stepping-stone from the square-law model to BSIM4
Paper in proceedings, 2013

Students often experience difficulties grasping the gap between simple square-law MOSFET models and advanced BSIM models with a large number of model parameters for modeling the many second-order short-channel effects(SCE). In this paper, a physics-based learning tool MOSFET model is presented with the aim of serving as a stepping-stone between these two models. The model is based on three model parameters in each of the two regions of strong inversion operation. The three-point model parameter extraction scheme is presented to support student learning and hands-on experience. The model is useful both for small-signal parameter calculations in the analog bias region and for calculation of large-signal currents during logic gate transients. Model accuracy is very good, a lot better than first expected, even if geometry variations have not yet been explored.

MOSFET modeling

mobility roll-off

DIBL

three-point model parameter extraction

velocity saturation

Author

Kjell Jeppson

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

23rd International Workshop on Power And Timing Modeling, Optimization and Simulation, PATMOS 2013. Karlsruhe, Deutschland. SEP 09-11, 2013

39-44

Areas of Advance

Information and Communication Technology

Subject Categories

Nano Technology

ISBN

978-1-4799-1170-7

More information

Latest update

4/13/2018