Multiplicative and Additive Low-Frequency Noise in Microwave Transistors
Journal article, 2014
The additive noise (i.e., noise figure) in the 1-Hz-1-GHz range and multiplicative noise (i.e., gain fluctuations) in the 1-Hz-100-kHz range have been measured for six different types of high electron mobility transistors and two heterojunction bipolar transistors. The instrumentation enables measurement of multiplicative noise as small as 10(-6) (1 ppm). Measurements were performed at 300 and 22 K and results are discussed with regard to transistor technology, coupling of additive and multiplicative effects, and bias circuit dependence. The results are applied to radiometers and the degradation in performance due to the gain fluctuation is presented.
GAIN FLUCTUATIONS
WIDE-BAND
high electron-mobility transistor (HEMT)
AMPLIFIERS
radiometers
Gain fluctuations
noise
HEMTS
1/f
STABILITY
transistors
Author
S. Weinreb
California Institute of Technology (Caltech)
Joel Schleeh
Chalmers, Microtechnology and Nanoscience (MC2)
GigaHertz Centre
IEEE Transactions on Microwave Theory and Techniques
0018-9480 (ISSN) 15579670 (eISSN)
Vol. 62 1 83-91 6684329Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/tmtt.2013.2293123