Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge
Journal article, 2014
We demonstrate reversible carrier density control across the Dirac point (Delta n similar to 10(13) cm(-2)) in epitaxial graphene on SiC (SiC/G) via high electrostatic potential gating with ions produced by corona discharge. The method is attractive for applications where graphene with a fixed carrier density is needed, such as quantum metrology, and more generally as a simple method of gating 2DEGs formed at semiconductor interfaces and in topological insulators.
Author
Arseniy Lartsev
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Thomas Yager
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
T. Bergsten
SP Sveriges Tekniska Forskningsinstitut AB
A.Y. Tzalenchuk
National Physical Laboratory (NPL)
Royal Holloway University of London
Tjbm Janssen
National Physical Laboratory (NPL)
R. Yakimova
Linköping University
Samuel Lara Avila
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Sergey Kubatkin
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Applied Physics Letters
0003-6951 (ISSN) 1077-3118 (eISSN)
Vol. 105 6 063106Graphene-Based Revolutions in ICT And Beyond (Graphene Flagship)
European Commission (EC) (EC/FP7/604391), 2013-10-01 -- 2016-03-31.
Areas of Advance
Nanoscience and Nanotechnology
Subject Categories
Physical Sciences
DOI
10.1063/1.4892922